Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 µm. Carrier-induced change in refractive index of InP, GaAs, and InGaAsP. Low-power MOS-capacitor based silicon photonic modulators and CMOS drivers. High speed silicon Mach-Zehnder modulator. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor. Deposited silicon high-speed integrated electro-optic modulator. Preston, K., Manipatruni, S., Gondarenko, A., Poitras, C. 12.5 Gbit/s carrier-injection-based silicon microring silicon modulator. Xu, Q., Manipatruni, S., Schmidt, B., Shakya, J. Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. Total internal reflection optical switches to restrict carrier diffusion in the guiding layer. Kramers–Krong analysis of electrooptical switching in silicon. 40 Gb/s silicon photonics modulator for TE and TM polarizations. High speed carrier-depletion modulators with 1.4 V-cm VπL integrated on 0.25 µm silicon-on-insulator waveguides. High speed all-silicon optical modulator. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption. Here, we demonstrate an MZ modulator with a 250-µm-long InGaAsP/Si metal-oxide–semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09 Vcm in accumulation mode, an insertion loss of ∼1.0 dB, a cutoff frequency of ∼2.2 GHz in depletion mode and a 32-Gbit s –1 modulation with signal pre-emphasis. To overcome this, we introduce III–V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage–length product ( V π L), operation speed and insertion loss of Si MZ modulators. However, the large footprint of silicon photonics Mach–Zehnder (MZ) modulators will limit further increases in transmission capacity 1, 2, 3, 4. The introduction of external modulators into datacom networks is essential with advanced modulation formats. Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic.
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